OPTICAL PROPERTIES OF DONOR AND/OR ACCEPTOR DOPED SILICON NANOCRYSTALS
Prof. Minoru FUJII
Department of Electrical and Electronic Engineering,
Graduate
URL: http://www2.kobe-u.ac.jp/~fujii1/
Nanometer-size silicon (Si) crystals such as Si nanowires and nanocrystals are believed to be new building blocks for future Si-based electronic and optoelectronic devices. In order to realize nano-Si based devices, precise control of shallow impurities and understanding of the physics are crucial. It has been demonstrated that optical properties of Si nanocrystals are strongly modified by doping very small number of impurities. This means that impurity doping can be regarded as a third parameter, following the size and the shape, to control the optical properties of Si nanocrystals. By properly utilizing impurity doping, the optical properties can be controlled in a wider range and the application filed of Si nanocrystals may be extended. In this presentation, we discuss linear and non-linear optical properties of Si nanocrystals in which phosphorous (P) and / or boron (B) are doped and discuss the effects of doping on these properties. We also show that impurity doping affects the stability of Si nanocrystals in polar liquid and we can realize Si nanocrystals dispersible in polar liquids without surface functionalization.
讲座时间：
讲座地点：硅材料国家重点实验室（原硅厂）3号楼2楼会议室
联系人：皮孝东
联系方式：18857174469
